比特28

      About US
      Company Founded in 2008, the company has a registered capital of RMB 122,574,975. It was listed on the Sci-Tech Innovation Board (STAR Market) of the Shanghai Stock Exchange on February 10, 2022, with the stock code: 688261.
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      Products

      All products

      The company's main products include the GreenMOS series of Super Junction MOSFETs, SFGMOS and FSMOS series of Shielded Gate MOSFETs, TGBT, SuperSi²C MOSFETs, SuperSi MOSFETs and SiC MOSFETs. These products are widely applicable to industrial and automotive-grade application scenarios, represented by new energy vehicle DC charging piles, on-board chargers (OBC), photovoltaic inverters, energy storage systems, 5G base station power supplies, telecom power supplies, data center server power supplies, industrial lighting power supplies, power tools, intelligent robots, unmanned aerial vehicles (UAV) and UPS power supplies. They are also used in consumer electronics applications such as PC power supplies, adapters, TV power boards, fast chargers for mobile phones and electromagnetic heating products.

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      SJ MOSFETs

      In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.

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      SGT MOSFETs

      Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

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      IGBTs

      Oriental Semiconductor's IGBT chips adopt a unique Trident-Gate Bipolar Transistor (TGBT) device structure to achieve lower on-state voltage drop and reduced switching losses.Multiple series of first and second-generation TGBT products have been successively launched, covering voltage ranges from 600V to 1700V. These products are suitable for applications such as photovoltaic energy storage inversion, DC charging piles, automotive main drive, OBC, and UPS. Additionally, Oriental has developed an ultra-high-speed series TGBT with an operating frequency of 60-100 kHz, which meets the demands of further high-frequency power systems while delivering higher efficiency.

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      Trench MOSFETs

      Trench MOSFET: Reliable and Trustworthy Performance Through extensive development,we continuously expand our product portfolio with advanced small signal MOS and power MOS solutions. Our comprehensive product portfolio provides the flexibility needed in today's market, easily choose the product that best suits for you. Our leading technology ensures the highest reliability and performance, while advanced packaging enhances resistance and thermal performance while reducing size and costs.

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      Power Module

      Advanced power modules, including IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and intelligent power modules. IGBT modules are used in applications such as main drive and DC-AC class solar inverters, energy storage systems, uninterruptible power supplies, and motor drives. MOSFET modules are used in automotive motor drives and on-board charger applications, with voltage ratings of 40 V, 60 V, 80 V, and 650 V, and use super-junction technology and inductive resistors.

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      SiC MOSFETs

      Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.

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      GaN HEMT

      Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are increasingly becoming the choice for mainstream markets. For various high-voltage and low-voltage application scenarios, GaN HEMTs offer the fastest switching capabilities (with the highest dv/dt and di/dt) and superior energy efficiency performance. In addition, the self-developed GaN HEMTs by Oriental Semiconductor Co., Ltd. have reduced conduction losses and switching losses through innovative designs, further improving power density.

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      Power IC

      When connected in series with a power source, the OSP5050 high side OR-ing FET controller is used in conjunction with an external NMOSFET as an ideal diode rectifier. This OR-ing controller allows MOSFETs to replace diode rectifiers in distribution networks, thereby reducing power loss and voltage drop.

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      Application
      Application The products of Oriental Semiconductor cover a wide and specific range of application fields. In automotive electronics, the company has made in-depth deployment in electrification, covering on-board charging, various electronic control systems and thermal management. In the industrial and energy sectors, it provides solutions for battery testing, photovoltaic inversion and industrial power supplies. Meanwhile, its products also serve multiple key industries including consumer electronics (e.g., fast charging, televisions), household appliances (e.g., refrigerators, vacuum cleaners), communication facilities (e.g., data center power supplies) and motor drives (e.g., robots, UAVs, forklifts).
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      Quality Management
      Quality Management Date of Certification for ISO 9001 Quality Management System: January 11, 2016. Date of Certification for CNAS 17025 Laboratory Management System: March 3, 2025
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      Investor Relations
      Investor Relations Oriental Semiconductor is committed to establishing an effective communication mechanism with investors. Through transparent, timely and accurate information disclosure and communication, we help investors gain a comprehensive and objective understanding of the company’s strategies, operating status, financial performance and future development prospects. We ensure that all investors receive information of equal quality, build trusting relationships with them, and thereby enable the company’s intrinsic value to be reasonably reflected in the capital market.
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      Application
      Power Supplies for Data Center AIDC
      DC-DC Converter

      DC-DC Converter

      In AIDC applications, DC-DC conversion is a core process that steps down high-voltage direct current (or rectified DC from alternating current) stage by stage and precisely regulates it into the extremely low-voltage, high-current power required by the chips inside IT equipment. Its efficiency, power density and dynamic response directly determine the performance and energy consumption of computing devices.
      The DC-DC power supply system for AI is a "refined energy distribution network". Its design objective has evolved from simply "converting electrical energy" to "delivering massive amounts of energy accurately to computing cores within minimal space and time frames, with maximum efficiency and ultra-stable power quality". Future development will focus on "higher voltage busbars, more efficient topologies, smarter control systems, and deep integration with advanced thermal management technologies such as liquid cooling" to continuously support the exponentially growing energy demands of AI computing power.

      Block Diagram
      Design Features

      High Frequency, High Power Density, and High Integration.

      Soft Switching Technology & High Energy Efficiency.

      Application of Third-Generation Semiconductors.

      Excellent Transient Response.

      Multiple Protection Functions.

      Product Selection

      Type Model Number Parameters Package
      SGTMOSSFS06R013UGF60V/1.6mR PDFN5X6
      SGTMOSSFS08R03UGNF80V/3mR PDFN5X6
      SGTMOSSFS10R07UGNF100V/7mR PDFN5X6
      SGTMOSSFS10R12UGNF100V/12mR PDFN5X6
      SGTMOSSFS08R07GNF 80V/7mR PDFN5X6
      SGTMOSSFS03R009UGF30V/1.3mR PDFN5X6
      SGTMOSSFS03R015UGF30V/1.1mR PDFN5X6
      SGTMOSSFS03R021UGF30V/2.1mR PDFN5X6
      SGTMOSSFS130N10KF100V/3.9mR TO-263
      SGTMOSSFS10R035UGNF100V/3.5mR PDFN5X6
      SGTMOSSFS15R075UGNF150V/7.5mR PDFN5X6
      SGTMOSSFS10R03UGNF100V/3mR PDFN5X6
      SGTMOSSFS08R025UGNF100V/2.5mR PDFN5X6
      SGTMOSSFS06R012UGNF60V/1.2mR PDFN5X6
      SGTMOSSFS08R06UGNF80V/6mR PDFN5X6
      SGTMOSSFS10R12UNNF100V/12mR PDFN3.3X3.3
      SGTMOSSFS10R20NF100V/20mR PDFN3.3X3.3
      SGTMOSSFS04R013UGF40V/1.1mR PDFN5X6
      SGTMOSSFS08R019UGNF80V/1.9mΩ PDFN5X6
      SGTMOSSFS03R021UNF30V/2.1mΩ PDFN3.3X3.3
      Selected for you

      New Product

      OSG65R019H4T3ZFUltra-low internal resistance enables higher power conversion efficiency

      OSQ65R055H4T3NF_NB0V Turn-off, SiC Compatible with General-Purpose Driver Chips

      SFS08R023UGSCNFUltra-low thermal resistance meets the demand for higher power density

      Application

      On-Board Charger (OBC)High Power Density and Lightweight Design

      PD Chargers & AdaptersUltimate Breakthroughs in Power and Efficiency, Currently Supporting the Maximum Specifications of the Mainstream PD3.0 Standard

      Battery Formation and TestingFocuses on technological innovation in semiconductor devices

      Quality Control

      Quality PolicyContinuously provide customers with the most valuable products and services

      Quality ManagementContinuously improve product and service quality

      Quality StatementMeet customer needs, exceed customer expectations, and achieve win-win cooperation, coexistence and long-term development with customers

      Package Innovation

      T2PAKSurface-mount SiC Enables Lower Parasitic Inductance in Power Circuits

      QDPAKTop-side Cooling Package Delivers Superior Thermal Management Performance

      DSCPPAK5*6Ultra-low thermal resistance meets the demand for higher power density

      News
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      Shanghai SiC Summit Kicks Off | Oriental Semi Invites You to Explore New Opportunities in Data Center Upgrading 2026-05-26
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      Oriental Semi Wins xFusion’s Best Delivery Award, Joining Hands to Build a New Ecosystem of Computing Power Infrastructure 2026-05-21
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      Oriental Semi × Hynetek Official Announcement!Join Us at the 2026 Global AI Server Power Supply Summit 2026-05-15
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      Suzhou Headquarters

      Address:Building 65, Southeast Zone, Suzhou Nano City,No. 99 Jinji Lake Avenue, Suzhou Industrial Park
      Telephone:0512-62534962
      Email:enquiry@51fenfeng.com

      Shenzhen Application Support Center

      Address:Room 1905, 19th Floor, Building A7, Chuangzhi Cloud City,Xili Sub-district, Nanshan District, Shenzhen
      Telephone:0755-83229660
      Email:robin.lu@51fenfeng.com

      About US
      Company History Social Responsibility News Contact Us Join Us
      Products
      SJ MOSFETs SGT MOSFETs IGBTs Trench MOSFETs Power Module SiC MOSFETs GaN HEMT Power IC
      Application
      Automotive Electronics Power Supplies for Data Center AIDC Consumer Electronics Industrial Applications Household Appliances Communication Technology Motor Drives Robotics
      Quality Management
      Quality Policy Partner Portal Quality Management Quality Statement
      Investor Relations
      Investor Relations Equity Structure Management Team Financial Quick View Investor Communications

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